ICP Etching Systems
Samco’s Inductively Coupled Plasma (ICP) etching systems combine independent high-density plasma generation and directional ion acceleration to deliver fine-pattern micro-fabrication for compound semiconductors, silicon substrates, and advanced electronic devices. By decoupling plasma density from substrate bias, our ICP platforms achieve high etching rates, smooth sidewall morphology, and excellent profile control over high-aspect-ratio structures. Built to bridge the gap between Lab and Fab, Samco ICP etching systems enable predictable process scaling from initial device research to automated volume production.
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ICP Etching System RIE-400iP
Compact III-V Etching System
Si DRIE Systems
Samco’s Silicon Deep Reactive Ion Etching (Si DRIE) systems utilize high-density plasma technologies to achieve fast, high-aspect-ratio micro-fabrication in silicon substrates. Equipped with high-precision gas switching networks, 5 kW high-power RF sources, and temperature-controlled electrostatic chucks (ESC), our equipment enables fast, alternating etch-passivation cycling using the Bosch Process. Built to deliver exceptional process stability, Samco Si DRIE platforms provide repeatable silicon processing for MEMS, TSV, and advanced packaging applications.
CCP-RIE Systems
Samco’s Capacitively Coupled Plasma Reactive Ion Etching (CCP-RIE) systems provide stable dry etching solutions for dielectric thin films, fluorinated polymers, and surface modification processes. Utilizing parallel-plate electrode configurations, our CCP platforms generate uniform, low-density plasma across large substrate areas. Designed to meet versatile R&D and production requirements, Samco CCP-RIE systems offer broad operational windows for academic laboratories and semiconductor manufacturing facilities alike.
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CCP-RIE System RIE-10NR
De Facto Industry Standard
