Plasma Enhanced Chemical Vapor Deposition (PECVD) is a widely accepted technique within the industry, to form a thin film by generating active radicals and ions on a target substrate by turning a reactive gas into a plasma state and causing a chemical reaction on the target substrate to be deposited. The primary reason for its acceptance is its capability to operate at lower temperatures than thermal CVD. It is used to deposit silicon nitride film (SiN) as a passivation film and silicon oxide film (SiO₂) as an interlayer insulating film in the manufacturing process of compound semiconductors and silicon semiconductors.
SiH4-SiNx deposition
