Processes

ALD

ALD-Al₂O₃ deposition

PECVD

SiH₄-SiNx deposition

• Deposition of SiN on reversed mesa shape
• Stress repeatability of SiN deposition
• Stress control of SiN deposition

LSCVD®

SN2-SiNx deposition

• Fabrication of ultra-high Q-value SiNx ring resonators
• Characterization of SN2-SiNx by FTIR

TEOS-SiO₂ deposition

• Embedding results for optical waveguides
• Microlens array fabrication

DLC Coating

Compound Semiconductor Etching

Gallium nitride (GaN) etching

• GaN forward taper trench etch
• GaN Deep Trench Etch
• High selectivity etching of GaN/AlGaN
• Reverse taper etching of GaN for HBLEDs

Gallium arsenide (GaAs) etching

• HCG-GaAs VCSEL Grating Etch
• High-speed vertical GaAs etch
• GaAs VCSEL mesa etch
• GaAs Deep Mesa Etch for MicroLED
• Photonic crystal
• GaAs VCSEL formation
• Plasma scribing of GaAs wafer

Indium phosphide (InP) etching

• Ridge formation of InP lasers
• Formation of diffraction gratings for InP lasers
• Pillar formation of InP

Silicon carbide (SiC) etching

• Trench etching for SiC MOSFETs
• SiC via hole etching for GaN HEMT

Si Etching

Deep Si etching (bosch process)

• DRIE of high aspect ratio 80:1
• DRIE of high aspect ratio 50:1
• 400 μm depth forward taper etching
• 18 μm/min high-rate DRIE
• MEMS Micromirror fabrication
• 450 μm deep pillar formation
• Fabrication of a post-column mixer
• Deep Si etching with an aspect ratio of 23
• Penetration etching of 500 μm depth
• Imprinting mold fabrication
• Microfluidics fabrication

Deep Si etching (non bosch process)

• 126 μm deep via hole for TSV
• Fine non-bosch process for Si nanodevice fabrication

Si, Poly-Si, SiN etching

• Fabrication of nanopore devices
• Nanoimprint mold fabrication
• 20 nm width etching of Poly-Si by RIE plasma etching system
• Micro-TAS fabrication
• Failure Analysis
• Silica toroidal microcavity fabrication
• Movable body of Parilen
• Spiral structure fabrication

Metal/Dielectric Etching

SiO₂ etching

• RIE plasma etching of SiO2
• Three dimensional processing of quartz glass (10 μm square pyramid)
• Three dimensional processing of quartz glass (stepped structure of ø50 μm)
• Microfabrication of quartz glass
• Grating formation of SiO₂
• High-speed etching of SiO₂
• 150 μm deep etching of quartz

Sapphire etching

• Patterned Sapphire Substrate for HBLED
• 85 μm deep sapphire etching

Organic/Polymer

Polyimide

• Waveguide Core Formation of Polyimide
• 50 μm etching of Polyimide

Aqua Plasma®

Reduction

• Reduction of copper in electronic device applications
• Reduction of silver electrode for LED package

Surface modification

• COP bonding at room temperature
• Superhydrophilization of COP

Surface Treatment

Plasma treatment

• Hydrophilic treatment
• Printed Circuit Board Desmear