Excellent uniformity in ø6"
Trench etching of SiO2 using RIE-10NR
SiO2 etch rate: 18 nm/min
Etching depth: 540 nm
Selectivity (SiO2 /PR) : 0.83
Trench etching of SiO2 is achieved while maintaining the angle of the resist sidewalls. The depth is 540 nm and the selectivity to resist is 0.8 ~ 1.0. Microtrenching is prevented. In addition, time-controlled etching stops enable SiO2 to be etched with little or no etching of the underlying Si.
Uniformity of ±1% (edge exclusion area: 15 mm) is achieved in the etching of SiO2 films on ø6" Si wafers.