ProcessesTrench etching for SiC MOSFETs

Trench gate processing of SiC MOSFETs by Samco's cutting edge ICP etching system. It has smooth sides and a sub-trenchless round shape.
Depth: 2 μm
Etch Rate: >450 nm/min
SiC/SiO₂ selectivity: >5
ø6 inch uniformity: <±3%