The anisotropic and small footing ridge shape with a width of 1.8 μm and a depth of 2.5 μm has been achieved. The etching rate of 350 nm/min was obtained with almost no sidewall deposits. The mask is SiO₂.
ProcessesRidge formation of InP lasers
The anisotropic and small footing ridge shape with a width of 1.8 μm and a depth of 2.5 μm has been achieved. The etching rate of 350 nm/min was obtained with almost no sidewall deposits. The mask is SiO₂.