ProductsSilicon Deep RIE System RIE-400iPB

The RIE-400iPB is a load lock deep silicon etching system specifically designed for the Bosch Process, accommodating wafers up to 100 mm (4 inches). The system is equipped with a unique reaction chamber, a temperature-controlled electrode, and a high-flow exhaust system, all integrated into a compact, space-saving design. This design ensures reliable and exceptional process control, enabling high-rate, high-aspect, tilt-free etching with excellent selectivity. Additionally, the system can achieve high-rate SiO2 etching by substituting the ICP source.

Bosch Process Optimized ICP Source

• High rate Si etch (>14 µm/min)
• Leading PR:Si selectivity (up to 250:1)
• Etch up to 400 µm deep

Bosch Process Optimized RF and Gas Systems

• Stable and repeatable plasma discharge during gas switching
• Reduction of scallop size whilst maintaining etch rates
• Notch prevention technology for SOI etch

Stable Repeatable Processing

• Chamber heating for improved process stability
• ESC for stable wafer temperatures throughout the process

High Performance SiO2 Etch (Option)

• Quick change to specialized SiO2 etch mode
• Up to 600 nm/min etching rates with minimal polymer formation

Easy System Maintenance

• MEMS
• Accelerator
• Gyroscopes
• Pressure sensors
• Actuators
• Medical devices such as μTAS

• SiO2 etch ICP unit