Si Deep Reactive Ion Etching (DRIE) Systems
Samco delivers Silicon Deep Reactive Ion Etching (DRIE) systems for MEMS device fabrication and TSV via-hole etching. Samco was the first Japanese semiconductor process equipment manufacturer to provide DRIE systems using the Bosch Process. Our systems have industry-leading process capabilities, and the product lineup covers both R&D and production. For high-volume device manufacturing, a double reaction chamber specification is also available.
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Silicon Deep RIE System RIE-400iPB
Novel low-cost system
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Silicon Deep RIE System RIE-800iPB
World leading performance
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Silicon Deep RIE System RIE-800iPBC
Vacuum cassette loading
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Silicon Deep RIE System RIE-800BCT
Atmospheric cassette loading
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Silicon Deep RIE System RIE-802BCT
Double chamber system
Key Features and Benefits
- Industry leading etch rates of over 50 μm/min
- High selectivity of over 250:1 (Si:Photoresist)
- Uniformity of ±5% or better (ø4, 6, and 8" wafers)
- High aspect ratio (greater than 100:1)
- Low scalloping, smooth sidewall profile (less than 0.1 μm scallops)
- Patented, dual frequency silion on insulator (SOI) anti-notch etching technique
- Unique "anti-tilt" feature that ensures high uniformity
- Electrostatic chuck and helium backside cooling (for wafer temperature control)
- ICP source can be modified for DRIE of SiO2