ICP-RIE Plasma Etching System RIE-400iPC
Space-saving Production System
Description
The RIE-400iPC cassette loading ICP-RIE plasma etching system utilises high-density inductively coupled plasma (ICP) to achieve precise etching. Designed for wafers up to 100 mm (4 inch), the system features an advanced ICP source, temperature-controlled electrode, and a high-flow exhaust system, all within a compact, space-saving design. This system provides exceptional process repeatability and stability, ensuring excellent efficiency for a wide range of etching applications, including GaN, GaAs, InP, SiC, and various other materials.
Key Features and Benefits
- Advanced ICP source enables highly uniform, high selectivity, and precise etching
- 2 kW RF power can be applied efficiently and stably
- ESC and He backside cooling for optimum temperature control
- The high flow exhaust system directly connected to the reaction chamber
- Compatible with ø2", 3", and 4" wafers
- In-situ end-pointing using interferometric and/or optical emission spectroscopic endpoint monitors
- Fast-switching gas input for ALE process as an option
Applications
- InP ridge etch for edge emitting laser
- InP DFB grating etch
- GaAs/AlGaAs mesa etch for VCSELs
- High selectivity etch of GaN/AlGaN
- GaN recess etch
- SiC/GaN trench etch for power electronics
- GaSb/InSb etch for NIR/SWIR sensors
- SiO2 and SiNx etch
- Al, Cr, Ni etch
Options
- Interferometric endpoint monitor
- Optical emission spectroscopy (OES) endpoint monitor
- Fast-switching gas line for ALE process
