ICP-RIE Plasma Etching System RIE-400iP
for GaN, GaAs, InP, & SiC
Description
The RIE-400iP is a load lock Inductively Coupled Plasma (ICP) etching system designed to handle wafers up to ø100 mm (4”). The advanced ICP Source HSTC™ (Hyper Symmetrical Tornado Coil) effectively delivers uniform, high-density plasma and ensures excellent etch uniformity. This system provides robust and reliable hardware and exceptional process control, achieving high productivity for a wide range of etching applications, including GaN, GaAs, InP, SiC, and various materials. With its sleek, space-saving design, the RIE-400iP requires minimal cleanroom space.
Key Features and Benefits
- HSTC™ enables highly uniform, high selectivity, and precise etching
- 2 kW RF power can be applied efficiently and stably
- ESC and He backside cooling for optimum temperature control
- The high flow exhaust system directly connected to the reaction chamber
- Compatible with ø2", 3", and 4" wafers
- In-situ end-pointing using both interferometric and optical emission spectroscopic endpoint monitors
- Robust, fast-switching gas input for ALE process as an option
Applications
High-precision etching of compound semiconductors such as GaN, GaAs, InP, etc.
Production of semiconductor lasers and photonic crystals.
Options
- In-situ end-pointing using both interferometric and optical emission spectroscopic endpoint monitors
- Robust, fast-switching gas input for ALE process
Papers
- Kondo, Takaaki, Yoshihiko Akazawa, and Naotaka Iwata. "Effects of p-GaN gate structures and fabrication process on performances of normally-off AlGaN/GaN high electron mobility transistors." Japanese Journal of Applied Physics 59.SA (2019): SAAD02.
- Raj, Vidur, et al. "High-efficiency solar cells from extremely low minority carrier lifetime substrates using radial junction nanowire architecture." ACS nano 13.10 (2019): 12015-12023.
- Papadogianni, Alexandra, et al. "Two-dimensional electron gas of the In 2 O 3 surface: Enhanced thermopower, electrical transport properties, and reduction by adsorbates or compensating acceptor doping." Physical Review B 102.7 (2020): 075301.
- Soo, Joshua Zheyan, et al. "Protocol for scalable top-down fabrication of InP nanopillars using a self-assembled random mask technique." STAR protocols 4.2 (2023): 102237.
- Berthold, Theresa. Gaswechselwirkungsreaktionen mit Indiumoxidschichten und deren Einfluss auf die elektronischen Oberflächeneigenschaften. Diss. Technische Universität Ilmenau, 2018.
