Atomic Layer Etching (ALE) Systems
Atomic Layer Etching (ALE) is a technology that separates the adsorption and reaction steps in the etching process and repeats each step to control etching depth at the nano-level. ALE is gaining increasing attention as semiconductor devices become finer, emerging as a key process in the development of next-generation devices. ALE is expected to find applications in processes such as controlling GaN or AlGaN film thickness and maintaining surface smoothness through low-rate etching, as well as in p-GaN/AlGaN high selectivity ratio etching of GaN HEMT device. Samco offers two models of ICP etching systems for ALE, "RIE-400iP-ALE" and "RIE-800iP-ALE," which are suitable for use across research and production stages.
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RIE-400iP-ALE
for precise depth control
Inductively Coupled Plasma (ICP) Etching Systems
Samco delivers many dedicated Inductively Coupled Plasma (ICP) etching system in research and production to meet each customer's process requirements for high-density plasma etching. Our reliable, durable and compact ICP etching system allows you to handle a variety of materials (III-V compound semiconductors (GaN, GaAs, InP), silicon, SiC, quartz, glass, dielectrics, and metals.).
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ICP-RIE Plasma Etching System RIE-400iP
GaN, GaAs, InP, & SiC
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ICP-RIE Plasma Etching System RIE-400iPC
4 inch production system
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ICP-RIE Plasma Etching System RIE-230iP
Versatile loadlock system
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ICP-RIE Plasma Etching System RIE-230iPC
Versatile vacuum cassette system
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ICP-RIE Plasma Etching System RIE-802iPC
Double chamber system
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ICP-RIE Plasma Etching System RIE-800iPC
Excellent repeatability & stability
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ICP-RIE Plasma Etching System RIE-350iPC
Tray based batch processing
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ICP-RIE Plasma Etching System RIE-800iP
Excellent repeatability & stability
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ICP-RIE Plasma Etching System RIE-100HiC
High throughput system
Si Deep Reactive Ion Etching (DRIE) Systems
Samco delivers Silicon Deep Reactive Ion Etching (DRIE) systems for MEMS device fabrication and TSV via-hole etching. Samco was the first Japanese semiconductor process equipment manufacturer to provide DRIE systems using the Bosch Process. Our systems have industry-leading process capabilities, and the product lineup covers both R&D and production. For high-volume device manufacturing, a double reaction chamber specification is also available.
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Silicon Deep RIE System RIE-400iPB
Novel low-cost system
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Silicon Deep RIE System RIE-800iPB
World leading performance
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Silicon Deep RIE System RIE-800iPBC
Vacuum cassette loading
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Silicon Deep RIE System RIE-800BCT
Atmospheric cassette loading
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Silicon Deep RIE System RIE-802BCT
Double chamber system
Reactive Ion Etching (RIE) - Plasma Etching Systems
Samco offers reliable and durable Reactive Ion Etching (RIE) Systems for R&D and production customers. Benchtop compact RIE etcher is a suitable tool for academic device research and die deprocessing for IC failure analysis. Open-load RIE systems and loadlock RIE systems have wide process window for plasma etching of various materials (silicon, dielectric, compound semiconductor, metal, polymer and photoresist). Cassette loading RIE systems improve process throughput for device fabrication.
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RIE Plasma Etching System RIE-10NR
Compact novel low-cost system
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RIE Plasma Etching System RIE-200NL
Excellent repeatability
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Cassette Loading RIE Plasma Etching System RIE-200C
High throughput system
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ø300 mm RIE Plasma Etching System RIE-300NR
Up to ø300 mm (12")
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Compact Etcher RIE-1C
Compact benchtop system
Xenon Difluoride Etching Systems
Samco's Xenon difluoride (XeF2) Etching Systems is mainly using for the etching of the Si sacrificial layer for fabrication of MEMS (Micro Electro Mechanical Systems) devices. This dry process avoids the destruction of devices due to stiction, which is a problem in the wet process, and eliminates the need for pretreatment and post-processing in the wet process. It is also a tabletop type and very compact in design.
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Si Sacrificial Layer Etching System VPE-4F
Compact benchtop system