Plasma Enhanced CVD System PD-220NL
Compact loadlock system for R&D
Description
The PD-220NL is a load lock plasma-enhanced chemical vapor deposition (PECVD) system designed for silicon-based thin film deposition for research and development. It deposits SiO2 and SiNx films with uniform thickness and controlled stress. The system supports both stable 13.56 MHz processing and dual-frequency 13.56 MHz/400 kHz processing for film stress control. It also accommodates liquid precursor processes, such as TEOS and SN-2, as well as SiH4-based processes. The system processes multiple small wafers using a ø230 mm carrier tray and can handle different wafer sizes by changing the tray.
Key Features and Benefits
- Processing up to ø220 mm (ø3" x 5, ø4" x 3, ø8" x 1)
- Superior uniformity and stress control
- Excellent process stability and repeatability
- Robust system with minimal running / maintenance cost
- User-friendly touch screen interface for parameter control and recipe storage.
- With its sleek, compact design, the PD-220NL requires minimal cleanroom space
- Dual-frequency (13.56 MHz + 400 kHz) PECVD for superior process control
Applications
- SiH4-SiNx
- SiH4-SiO2
- Liquid precursor (SN-2) SiNx
- TEOS-SiO2
