Thermal ALD System
AL-10
Pin-hole free films deposition
Description
The AL-10 is an open load Atomic Layer Deposition (ALD) system that enables atomic level control over film thickness. This system utilizes thermal ALD for the primary deposition of oxide films. Through the alternating introduction of organometallic precursors and oxidants into the reaction chamber, the system attains exceptional film thickness control, superior in-plane uniformity, and excellent step coverage, ensuring that deposition occurs solely through surface reactions. Pulsed precursor delivery, with pulse durations of several hundred milliseconds or less, minimizes precursor consumption and enhances deposition efficiency. The system can process a single ⌀8 inch wafer or simultaneously process three ⌀4 inch wafers.
Key Features and Benefits
- Uniform layer control at the atomic layer level
- Conformal deposition to high aspect ratio structures
- Excellent in-plane uniformity and repeatability
- Chamber designs focused on minimizing particle generation
Applications
- Gate insulators for electronic devices
- Passivation film for semiconductors, organic EL, etc.
- Reflective surface of semiconductor laser
- Deposition on 3D structures such as MEMS
- Deposition on graphene
Options
- Plasma unit (CCP or Remote ICP)
