Thermal ALD System AL-1
Pin-hole free films deposition
Description
AL-1 achieves high film thickness control and good step coverage by alternately supplying organometallic raw materials and oxidants to the reaction chamber and depositing the film using only surface reactions. The film thickness can be controlled on the order of atomic layers. In addition, the film can be deposited with good coverage and uniform thickness on the inner wall of the hole with high aspect ratio. Three ø4 inch wafers can be deposited at the same time.
Key Features and Benefits
- Processing up to 230 mm carrier tray (4" x 3, 8" x 1).
- Advanced Reaction Chamber Design: Optimized precursor inlet lines and flow minimize particle generation.
- Enhanced Efficiency: Pulses of tens of milliseconds reduce precursor loss and improve deposition efficiency.
- Robust Safety Features: Equipped with various interlocks and anomaly detection functions for secure operation.
Applications
- Gate insulating films in electronic devices
- Passivation films in semiconductors, organic EL, solar cells, and carbon nanotubes
- Deposition film on 3D structures such as MEMS
- Anti-reflective films for semiconductor lasers
