Trench gate processing of SiC MOSFETs by Samco's cutting edge ICP etching system. It has smooth sides and a sub-trenchless round shape.
Depth: 2 μm
Etch Rate: >450 nm/min
SiC/SiO₂ selectivity: >5
ø6 inch uniformity: <±3%

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Products

RIE-800iP

RIE-800iPC





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