Paper
The system of semiconductor quantum dots coupled with nano-resonators is expected to be applied to quantum photonics devices and quantum information devices. In order to achieve this, it is necessary to reduce the size of the resonator and at the same time to realize a high Q value in order to obtain a large interaction (coupling constant).In this work, we have achieved the highest performance index record in semiconductor quantum dot-nanocavity coupling systems by realizing a high Q-value H0 photonic crystal nanocavity containing InAs quantum dots.ICP etching equipment for high vacuum microfabrication was used to process GaAs H0 type photonic crystals. The hole is 130 nm in diameter.
Photo courtesy of Arakawa, Iwamoto Lab, The University of Tokyo
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